Philips Stereo Amplifier SA5223 User Manual

INTEGRATED CIRCUITS  
SA5223  
Wide dynamic range AGC  
transimpedance amplifier (150MHz)  
Product specification  
IC19 Data Handbook  
1995 Oct 24  
Philips  
Semiconductors  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
DC ELECTRICAL CHARACTERISTICS  
Typical data and Min and Max limits apply at T = 25°C, and V = +5V, unless otherwise specified.  
A
CC  
SA5223  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
Max  
Min  
1.3  
2.9  
-200  
15  
Typ  
1.55  
3.2  
80  
V
V
Input bias voltage  
1.8  
3.5  
V
IN  
Output bias voltage  
Output offset voltage (V  
Supply current  
V
±
O
V
- V  
)
+200  
29  
mV  
mA  
mA  
OS  
CC  
PIN6  
PIN7  
I
22  
I
Output sink/source current  
1.5  
2
OMAX  
NOTE: Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.  
AC ELECTRICAL CHARACTERISTICS  
Typical data and Min and Max limits apply at T = 25°C and V = +5V, unless otherwise specified.  
A
CC  
SA5223  
Typ  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
UNIT  
Min  
Max  
R
T
Transresistance (differential output)  
90  
125  
160  
kΩ  
DC tested, R = , I = 0-1µA  
L
IN  
Transresistance  
(single-ended output)  
R
45  
62.5  
140  
70  
80  
kΩ  
DC tested, R = , I = 0-1µA  
T
L
IN  
Output resistance  
(differential output)  
R
DC tested  
O
Output resistance  
(single-ended output)  
R
DC tested  
O
f
Bandwidth (-3dB)  
Input resistance  
Test Circuit 1  
DC tested  
110  
150  
250  
0.7  
MHz  
3dB  
R
C
IN  
IN  
1
Input capacitance  
pF  
Input capacitance including Miller multiplied  
capacitance  
C
4.0  
3
pF  
INT  
R/V  
Transresistance power supply sensitivity  
V
CC1  
= V  
= 5 ±0.5V  
%/V  
CC2  
Transresistance ambient temperature sensi-  
tivity  
o
R/T  
T = T  
- T  
A MIN  
0.09  
%/ C  
A
A MAX  
RMS noise current spectral density (referred  
to input)  
Ǹ
I
Test Circuit 2, f = 10MHz  
1.17  
7
IN  
pAń Hz  
2
Test circuit 2,  
f = 50MHz  
Integrated RMS noise current over the band-  
width (referred to input)  
f = 100MHz  
f = 150MHz  
f = 50MHz  
f = 100MHz  
f = 150MHz  
12  
16  
C
= 0.1pF  
S
I
nA  
T
8
C
= 0.4pF  
13  
S
18  
PSRR  
PSRR  
Power supply rejection ratio (change in V  
)
DC Tested, V = ±0.5V  
f = 1.0MHz, Test Circuit 3  
–55  
–20  
800  
dB  
dB  
OS  
CC  
3
Power supply rejection ratio  
V
Maximum differential output AC voltage  
I = 0–2mA peak AC  
i
mV  
OLMAX  
dRT  
dt  
4
AGC loop time constant parameter  
10µA to 20µA steps  
1
dB/ms  
mA  
Maximum input amplitude for output duty  
cycle of 50 ±5%  
I
Test circuit 4  
+2  
INMAX  
t , t  
Output rise and fall times  
10 – 90%  
f = 10MHz  
2.2  
2.2  
ns  
ns  
r
f
t
D
Group delay  
NOTES:  
1. Does not include Miller-multiplied capacitance of input device.  
2. Noise performance measured differential. Single-ended output noise is higher due to CM noise.  
3. PSRR is output referenced and is circuit board layout dependent at higher frequencies. For best performance use a RF filter in V line.  
CC  
4. This implies that the SA5223 gain will change 1dB (10%) in the absence of data for 1ms (i.e., can handle bursty data without degrading Bit  
Error Rate (BER) for 100,000 cycles at 100MHz).  
3
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
TEST CIRCUITS  
SINGLE-ENDED  
R
+ 12.4 @ S  
@ R  
,
R + 1k ) R  
IN  
[ 1250W  
INSS  
21  
IN  
TSE  
SPECTRUM ANALYZER  
50  
NETWORK ANALYZER  
V
CC  
S-PARAMETER TEST SET  
PORT2  
.1µF  
1.0µF  
PORT1  
OUT  
Z
= 50Ω  
V
Z
O
= 50Ω  
O
CC  
NE5209  
IN DUT  
OUT  
.1µF  
.1uF  
500  
500  
0.1uF  
R=1k  
GND  
1.0µF  
OUT  
GND  
GND  
C
2
1
S
IN DUT  
OUT  
.1uF  
50Ω  
GND  
50  
1
2
50  
Test Circuit 2: Noise  
SD00370  
Test Circuit 1: Bandwidth  
SD00371  
5V  
BIAS TEE  
NETWORK ANALYZER  
S-PARAMETER TEST SET  
PORT2  
PORT1  
50Ω  
TRANSFORMER  
CONVERSION  
LOSS = 9dB  
CAL  
0.1uF  
V
CC  
OUT  
.1uF  
NHO300HB  
IN DUT  
OUT  
.1uF  
NC  
GND  
50Ω  
UNBAL.  
100Ω  
GND  
2
1
BAL.  
SD00372  
Test Circuit 3: PSRR  
5V  
50% DUTY CYCLE  
PULSE GEN  
.1µF  
500Ω  
OFFSET  
0.1uF  
OUT  
DUT  
A
Z
= 50Ω  
O
IN  
OSCILLOSCOPE  
1kΩ  
.1µF  
500Ω  
OUT  
B
Z
= 50Ω  
O
50Ω  
GND  
GND  
2
1
Meaurement done using  
differential wave forms  
Test Circuit 4: Duty Cycle Distortion  
SD00373  
4
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
V
CC  
GND  
8
1
PAD CENTER LOCATIONS  
X(mm)  
Y(mm)  
NC NC  
G1  
7
OUT  
OUTB  
G2  
2
GND1  
IN  
GND2  
OUT  
OUTB  
-0.400  
-0.400  
+0.400  
+0.400  
+0.400  
+0.400  
-0.053  
-0.223  
-0.342  
-0.046  
+0.154  
+0.380  
V
CC  
IN  
3
DIE SIZE  
X(mm)  
6
NC  
Y(mm)  
1.32  
1.08  
5
GND  
4
SD00507  
Figure 1. SA5223 Bonding Diagram  
carriers, it is impossible to guarantee 100% functionality through this  
process. There is no post waffle pack testing performed on  
individual die.  
Die Sales Disclaimer  
Due to the limitations in testing high frequency and other parameters  
at the die level, and the fact that die electrical characteristics may  
shift after packaging, die electrical parameters are not specified and  
die are not guaranteed to meet electrical characteristics (including  
temperature range) as noted in this data sheet which is intended  
only to specify electrical characteristics for a packaged device.  
Since Philips Semiconductors has no control of third party  
procedures in the handling or packaging of die, Philips  
Semiconductors assumes no liability for device functionality or  
performance of the die or systems on any die sales.  
All die are 100% functional with various parametrics tested at the  
wafer level, at room temperature only (25°C), and are guaranteed to  
be 100% functional as a result of electrical testing to the point of  
wafer sawing only. Although the most modern processes are  
utilized for wafer sawing and die pick and place into waffle pack  
Although Philips Semiconductors typically realizes a yield of 85%  
after assembling die into their respective packages, with care  
customers should achieve a similar yield. However, for the reasons  
stated above, Philips Semiconductors cannot guarantee this or any  
other yield on any die sales.  
5
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
SD00521  
Figure 2. SONET Test Board — 155Mb/s (1300nm)  
6
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
L 2  
C 4  
C 9  
C 8  
C 3  
R 2  
C 1  
R 1  
C 2  
R 1 2  
D o u t  
D o u t  
R 5  
R 8  
R 7  
R 6  
C 1 2  
1
C 1  
R 9  
D 1  
R 1 0  
TOP VIEW  
BOTTOM VIEW  
SD00522  
Figure 3. SA5223 Board Layout (NOT ACTUAL SIZE)  
7
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
28.00  
26.00  
24.00  
22.00  
20.00  
18.00  
16.00  
100  
90  
80  
70  
60  
50  
40  
V
R
= (I = 0) = V  
= INFINITY  
– V  
OUT OUT  
IN  
OS  
L
V
= 5.5V  
CC  
V
= 5.0V  
CC  
V
= 5.5V  
= 5.0V  
CC  
V
CC  
V
= 4.5V  
CC  
V
= 4.5V  
CC  
-50  
-25  
0
25  
50  
75  
100  
SD00530  
-50  
-25  
0
25  
50  
75  
100  
SD00527  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 4. SA5223 I vs Temperature  
Figure 7. SA5223 Output V vs Temperature  
OS  
CC  
3.500  
3.400  
3.300  
3.200  
3.100  
3.000  
2.900  
1.900  
1.800  
1.700  
1.600  
1.500  
1.400  
1.300  
1.200  
V
OUT  
V
V
V
= 5.5V  
= 5.0V  
= 4.5V  
CC  
CC  
CC  
R
= INFINITY  
L
V
= 5.0V, Temperature = 25°C  
CC  
V
OUT  
10  
8
9
0
1
2
3
4
5
6
7
DC INPUT CURRENT (µA)  
-50  
-25  
0
25  
50  
75  
100  
SD00528  
SD00531  
TEMPERATURE (°C)  
Figure 8. SA5223 Output Voltage vs DC Input Current  
(for small input current)  
Figure 5. SA5223 Input V  
vs Temperature  
BIAS  
4.200  
4.000  
3.800  
R
= INFINITY  
= 5.0V, Temperature = 25°C  
L
V
3.600  
3.400  
3.200  
3.000  
2.800  
2.600  
CC  
V
= 5.5V  
3.800  
3.600  
3.400  
3.200  
3.000  
2.800  
2.600  
2.400  
2.200  
2.000  
CC  
V
OUT  
V
V
= 5.0V  
= 4.5V  
CC  
CC  
V
OUT  
-50  
-25  
0
25  
50  
75  
100  
SD00529  
1
10  
100  
1000  
10000  
SD00532  
TEMPERATURE (°C)  
DC INPUT CURRENT (µA LOG)  
Figure 6. SA5223 Output V  
vs Temperature  
Figure 9. SA5223 Output Voltage vs DC Input Current  
(for large input current)  
BIAS  
8
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
0.350  
1000  
85°C  
R
CC  
= INFINITY  
L
0.300  
V
= 5.0V  
25°C  
Temperature = -40, 25, 85°C  
100  
0.250  
RT = V  
/ I  
OD IN  
R
= INFINITY  
= 5.0V, Temperature = 25°C  
L
-40°C  
0.200  
0.150  
0.100  
0.050  
0.000  
V
V
CC  
OD  
= V  
V  
V  
10  
1
OUT  
OUT  
OS  
0
1
10  
100  
DC INPUT CURRENT (µA LOG)  
1000  
10000  
8
9
10  
0
1
2
3
4
5
6
7
DC INPUT CURRENT (µA)  
SD00533  
SD00536  
Figure 10. SA5223 Differential Output vs DC I  
(for small input current)  
Figure 13. SA5223 Differential RT vs DC I  
(for large input current)  
IN  
IN  
160  
140  
120  
R
= INFINITY  
= 5.0V  
L
V
1.800  
1.600  
1.400  
1.200  
1.000  
0.800  
0.600  
0.400  
0.200  
0.000  
CC  
Temperature = 25°C  
RT = V  
/ I  
OD IN  
R
V
= INFINITY  
V
= 5.5V  
CC  
L
= 5.0V, Temperature = 25°C  
100  
80  
CC  
OD  
V
= V  
V  
V  
V
= 5.0V  
OUT  
OUT OS  
CC  
V
= 4.5V  
CC  
60  
40  
20  
0
0
1
2
3
4
5
6
7
8
9
10  
DC INPUT CURRENT (µA)  
1
10  
100  
1000  
10000  
SD00534  
SD00537  
DC INPUT CURRENT (µA, LOG)  
Figure 14. SA5223 Differential RT vs DC I  
(for small input current)  
IN  
Figure 11. SA5223 Differential Output vs DC I  
IN  
1000  
100  
10  
1
160  
140  
120  
85°C  
R
V
= INFINITY  
= 5.0V  
L
CC  
R
CC  
= INFINITY  
L
Temperature = -40, 25, 85°C  
RT = V  
V
= 4.5, 5.0, 5.0V  
/ I  
OD IN  
Temperature = 25°C  
RT = V  
25°C  
/ I  
OD IN  
-40°C  
100  
80  
25°C  
85°C  
60  
40  
20  
0
-40°C  
0
1
10  
100  
DC INPUT CURRENT (µA LOG)  
1000  
10000  
0
1
2
3
4
5
6
7
8
9
10  
SD00538  
DC INPUT CURRENT (µA)  
SD00535  
Figure 15. SA5223 Differential RT vs DC I  
(for large input current)  
IN  
Figure 12. SA5223 Differential RT vs DC I  
(for small input current)  
IN  
9
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier(150MHz)  
SA5223  
9
8
16  
14  
12  
10  
8
V
= 5.0V  
CC  
SINGLE-ENDED OUTPUT  
7
6
SINGLE-ENDED OUTPUT  
TEMPERATURE = 25°C  
VCC = 5.0V  
5
6
4
4
3
-40°C  
2
2
0°C  
25°C  
0
1
70°C  
-2  
0
85°C  
300  
SD00539  
-4  
1
-1  
10  
100  
START = 1MHz  
STOP = 200MHz  
FREQUENCY (MHz)  
FREQUENCY (MHz, LINEAR)  
SD00541  
Figure 16. Insertion Gain vs Frequency  
Figure 18. Group Delay vs Frequency  
16  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
TEMPERATURE = 25°C  
14  
12  
10  
8
SINGLE-ENDED OUTPUT  
V
= 5.0V  
CC  
Temperature = 25°C  
C
= 0pF  
S
6
4
2
V
V
V
= 5.5V  
= 5.0V  
= 4.5V  
CC  
CC  
CC  
0
-2  
-4  
1
10  
100  
300  
1
10  
100  
300  
SD00540  
FREQUENCY (MHz)  
SD00542  
FREQUENCY (MHz)  
Figure 19. SA5223 Input Current RMS Noise Spectral Density  
Figure 17. Insertion Gain vs Frequency  
10  
 
1995 Oct 24  
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier (150MHz)  
SA5223  
SO8: plastic small outline package; 8 leads; body width 3.9mm  
SOT96-1  
11  
1995 Oct 24  
 
Philips Semiconductors  
Product specification  
Wide dynamic range AGC transimpedance amplifier (150MHz)  
SA5223  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make chages at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 2000  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Date of release: 08-98  
Document order number:  
9397 750 06831  
Philips  
Semiconductors  
 

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