Philips Music Mixer SA615 User Manual

INTEGRATED CIRCUITS  
SA615  
High performance low power mixer FM IF  
system  
Product specification  
1997 Nov 07  
Replaces data of 1992 Nov 03  
IC17 Data Handbook  
Philips  
Semiconductors  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
BLOCK DIAGRAM  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF  
AMP  
LIMITER  
RSSI  
OSCILLATOR  
E
B
1
2
3
4
5
6
7
8
9
10  
SR00342  
Figure 2. Block Diagram  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
RATING  
9
UNITS  
V
V
CC  
Single supply voltage  
Storage temperature range  
Operating ambient temperature range SA615  
T
STG  
–65 to +150  
–40 to +85  
°C  
T
A
°C  
Thermal impedance  
D package  
N package  
90  
75  
θ
JA  
°C/W  
SSOP package  
117  
DC ELECTRICAL CHARACTERISTICS  
V
CC  
= +6V, T = 25°C; unless otherwise stated.  
A
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
SA615  
TYP  
UNITS  
MAX  
MIN  
V
Power supply voltage range  
DC current drain  
4.5  
8.0  
7.4  
V
mA  
V
CC  
I
5.7  
CC  
Mute switch input threshold (ON)  
(OFF)  
1.7  
1.0  
V
3
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
AC ELECTRICAL CHARACTERISTICS  
T = 25°C; V = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step–up; IF frequency = 455kHz; R17 = 5.1k; RF  
A
CC  
level = –45dBm; FM modulation = 1kHz with +8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.  
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.  
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed  
parameters.  
LIMITS  
SYMBOL  
PARAMETER  
TEST CONDITIONS  
SA615  
TYP  
UNITS  
MIN  
MAX  
Mixer/Osc section (ext LO = 300mV)  
f
Input signal frequency  
500  
150  
5.0  
MHz  
MHz  
dB  
IN  
f
Crystal oscillator frequency  
Noise figure at 45MHz  
OSC  
Third-order input intercept point  
Conversion power gain  
f1 = 45.00; f2 = 45.06MHz  
Matched 14.5dBV step-up  
50source  
-12  
13  
dBm  
dB  
8.0  
3.0  
-1.7  
4.7  
dB  
RF input resistance  
RF input capacitance  
Mixer output resistance  
Single-ended input  
kΩ  
pF  
3.5  
4.0  
(Pin 20)  
1.25  
1.50  
kΩ  
IF section  
IF amp gain  
Limiter gain  
50source  
50source  
Test at Pin 18  
80% AM 1kHz  
39.7  
62.5  
-109  
33  
dB  
dB  
Input limiting -3dB, R = 5.1k  
dBm  
dB  
17  
AM rejection  
25  
60  
43  
mV  
RM  
Audio level, R = 100k  
15nF de-emphasis  
150  
260  
10  
S
Unmuted audio level, R = 100k  
150pF de-emphasis  
RF level -118dB  
530  
12  
mV  
dB  
dB  
dB  
mV  
V
11  
SINAD sensitivity  
THD  
S/N  
Total harmonic distortion  
Signal-to-noise ratio  
-30  
-42  
68  
No modulation for noise  
IF level = -118dBm  
IF level = -68dBm  
1
IF RSSI output, R = 100kΩ  
0
160  
2.5  
4.8  
80  
800  
3.3  
5.8  
9
1.7  
3.6  
IF level = -18dBm  
V
RSSI range  
R = 100kPin 16  
dB  
dB  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
9
RSSI accuracy  
R = 100kPin 16  
9
+2  
IF input impedance  
1.40  
0.85  
1.40  
1.6  
1.0  
1.6  
58  
IF output impedance  
Limiter intput impedance  
Unmuted audio output resistance  
Muted audio output resistance  
58  
RF/IF section (int LO)  
Unmuted audio level  
System RSSI output  
mV  
S
RM  
4.5V = V , RF level = -27dBm  
450  
4.3  
CC  
4.5V = V , RF level = -27dBm  
V
CC  
NOTE:  
1. The generator source impedance is 50, but the SA615 input impedance at Pin 18 is 1500. As a result, IF level refers to the actual signal  
that enters the SA615 input (Pin 8) which is about 21dB less than the ”available power” at the generator.  
4
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
network does not cause 12dB(v) insertion loss, a fixed or variable  
resistor can be added between the first IF output (Pin 16) and the  
interstage network.  
CIRCUIT DESCRIPTION  
The SA615 is an IF signal processing system suitable for second IF  
or single conversion systems with input frequency as high as 1GHz.  
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of  
gain from a 50source. The bandwidth of the limiter is about  
28MHz with about 62.5dB(v) of gain from a 50source. However,  
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ  
source applications. The overall system is well-suited to battery  
operation as well as high performance and high quality products of  
all types.  
The signal from the second limiting amplifier goes to a Gilbert cell  
quadrature detector. One port of the Gilbert cell is internally driven  
by the IF. The other output of the IF is AC-coupled to a tuned  
quadrature network. This signal, which now has a 90° phase  
relationship to the internal signal, drives the other port of the  
multiplier cell.  
Overall, the IF section has a gain of 90dB. For operation at  
intermediate frequencies greater than 455kHz, special care must be  
given to layout, termination, and interstage loss to avoid instability.  
The input stage is a Gilbert cell mixer with oscillator. Typical mixer  
characteristics include a noise figure of 5dB, conversion gain of  
13dB, and input third-order intercept of –10dBm. The oscillator will  
operate in excess of 1GHz in L/C tank configurations. Hartley or  
Colpitts circuits can be used up to 100MHz for xtal configurations.  
Butler oscillators are recommended for xtal configurations up to  
150MHz.  
The demodulated output of the quadrature detector is available at  
two pins, one continuous and one with a mute switch. Signal  
attenuation with the mute activated is greater than 60dB. The mute  
input is very high impedance and is compatible with CMOS or TTL  
levels.  
The output of the mixer is internally loaded with a 1.5kresistor  
permitting direct connection to a 455kHz ceramic filter. The input  
resistance of the limiting IF amplifiers is also 1.5k. With most  
455kHz ceramic filters and many crystal filters, no impedance  
matching network is necessary. To achieve optimum linearity of the  
log signal strength indicator, there must be a 12dB(v) insertion loss  
between the first and second IF stages. If the IF filter or interstage  
A log signal strength completes the circuitry. The output range is  
greater than 90dB and is temperature compensated. This log signal  
strength indicator exceeds the criteria for AMPs or TACs cellular  
telephone.  
NOTE: dB(v) = 20log V /V  
OUT IN  
5
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
25dB,  
10dB,  
29dB,  
929/50PAD  
10.6dB,  
50/50PAD  
36dB,  
156k/50PAD  
1500/50PAD 50/50PAD  
51.5  
C20  
96.5  
51.7  
96.5  
32.6  
50.5  
71.5  
32.8  
2430  
C24  
71.5  
C22  
1.3k  
3880  
R17  
5.1k  
C15  
C19  
C16  
SW9  
FLT1 SW8  
C23  
SW7  
SW6  
FLT2  
SW5  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF AMP  
700  
LIMITER  
RSSI  
MIXER  
QUAD  
DETECTOR  
OSCILLATOR  
MUTE  
SWITCH  
EMITTER  
BASE  
1
2
3
4
5
6
7
8
9
10  
C9  
R9  
R10  
R11  
SW1  
SW3  
C8  
SW4  
C1  
C2  
L1  
C7  
L2  
C10  
C11  
C12  
C13  
C5  
R4  
51.1  
IFT1  
SW2  
X1  
R1  
C6  
C26  
C4  
C3  
R2  
EXT.  
LOC  
OSC  
R7  
30.5  
”C” WEIGHTED  
AUDIO  
R3  
45MHZ  
MEASUREMENT  
CIRCUIT  
C14  
44.545  
R8  
39.2  
R6  
178  
45.06  
MHZ  
MUTE  
RSSI  
OUTPUT  
AUDIO UNMUTED  
AUDIO  
V
CC  
MINI–CIRCUIT ZSC2–1B  
Automatic Test Circuit Component List  
C1 47pF NPO Ceramic  
C2 180pF NPO Ceramic  
C21  
C23  
C25  
C26  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
390pF +10% Monolithic Ceramic  
C5  
100nF +10% Monolithic Ceramic  
C6 22pF NPO Ceramic  
C7 1nF Ceramic  
C8 10.0pF NPO Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
IFT 1  
L1  
L2  
455kHz 270µH TOKO #303LN-1129  
C9  
C10  
C11  
C12  
C13  
C14  
100nF +10% Monolithic Ceramic  
6.8µF Tantalum (minimum) *  
100nF +10% Monolithic Ceramic  
15nF +10% Ceramic  
150pF +2% N1500 Ceramic  
100nF +10% Monolithic Ceramic  
300nH TOKO #5CB-1055Z  
0.8µH TOKO 292CNS–T1038Z  
X1 44.545MHz Crystal ICM4712701  
R9  
R17  
R10  
R11  
100k +1% 1/4W Metal Film  
5.1k +5% 1/4W Carbon Composition  
100k +1% 1/4W Metal Film (optional)  
100k +1% 1/4W Metal Film (optional)  
C15 10pF NPO Ceramic  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
*NOTE: This value can be reduced when a battery is the power source.  
SR00343  
Figure 3. SA615 45MHz Test Circuit (Relays as shown)  
6
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
R17  
5.1k  
C15  
FLT1  
C23  
FLT2  
C18  
C21  
C17  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
IF AMP  
700  
LIMITER  
RSSI  
MIXER  
QUAD  
DETECTOR  
OSCILLATOR  
MUTE  
SWITCH  
1
2
3
4
5
6
7
8
9
10  
C9  
R9  
R10  
R11  
C1  
C2  
C8  
L1  
C7  
R5  
C5  
C10  
C25  
C11  
C12  
C13  
IFT1  
L2  
45MHz  
INPUT  
X1  
C26  
C6  
C14  
MUTE  
RSSI  
OUTPUT  
AUDIO UNMUTED  
AUDIO  
V
CC  
NE/SA615N  
Application Component List  
C1 47pF NPO Ceramic  
C2 180pF NPO Ceramic  
C21  
C23  
C25  
C26  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
390pF +10% Monolithic Ceramic  
C5  
100nF +10% Monolithic Ceramic  
C6 22pF NPO Ceramic  
C7 1nF Ceramic  
C8 10.0pF NPO Ceramic  
Flt 1 Ceramic Filter Murata SFG455A3 or equiv  
Flt 2 Ceramic Filter Murata SFG455A3 or equiv  
IFT 1  
L1  
L2  
455kHz 270µH TOKO #303LN-1129  
C9  
C10  
C11  
C12  
C13  
C14  
100nF +10% Monolithic Ceramic  
6.8µF Tantalum (minimum) *  
100nF +10% Monolithic Ceramic  
15nF +10% Ceramic  
150pF +2% N1500 Ceramic  
100nF +10% Monolithic Ceramic  
300nH TOKO #5CB-1055Z  
0.8µH TOKO 292CNS–T1038Z  
X1 44.545MHz Crystal ICM4712701  
R9  
R17  
R10  
R11  
100k +1% 1/4W Metal Film  
5.1k +5% 1/4W Carbon Composition  
100k +1% 1/4W Metal Film (optional)  
100k +1% 1/4W Metal Film (optional)  
C15 10pF NPO Ceramic  
C17  
C18  
100nF +10% Monolithic Ceramic  
100nF +10% Monolithic Ceramic  
*NOTE: This value can be reduced when a battery is the power source.  
SR00344  
Figure 4. SA615 45MHz Application Circuit  
7
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
RF GENERATOR  
SA615 DEM0–BOARD  
45MHz  
RSSI  
AUDIO  
DATA  
V
CC  
(+6)  
C–MESSAGE  
DC VOLTMETER  
HP339A DISTORTION  
ANALYZER  
SCOPE  
SR00345  
Figure 5. SA615 Application Circuit Test Set Up  
NOTES:  
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be  
affected by the noise of the scope and HP339 analyzer.  
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or  
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.  
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or  
8kHz if you use 30kHz filters.  
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or –120dBm at the RF input.  
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.  
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and  
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity  
will be worse than expected.  
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10–15µF or higher value tantalum  
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in  
production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2–3dB.  
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22k, but should not  
be below 10k.  
8
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
20  
RF = 45MHz  
IF = 455kHz  
V
= 6V  
CC  
AUDIO REF = 174mV  
RMS  
RSSI  
0
–20  
–40  
5
4
3
(Volts)  
THD NOISE  
AM (80%)  
–60  
–80  
2
1
0
NOISE  
RSSI  
(Volts)  
–100  
–130  
–110  
–90  
–70  
–50  
–30  
–10  
10  
RF INPUT LEVEL (dBm)  
SR00346  
Figure 6. SA615 Application Board at 25°C  
9
1997 Nov 07  
 
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
DIP20: plastic dual in-line package; 20 leads (300 mil)  
SOT146-1  
10  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
SO14: plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  
11  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm  
SOT266-1  
12  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
NOTES  
13  
 
1997 Nov 07  
Philips Semiconductors  
Product specification  
High performance low power mixer FM IF system  
SA615  
Data sheet status  
[1]  
Data sheet  
status  
Product  
status  
Definition  
Objective  
specification  
Development  
This data sheet contains the design target or goal specifications for product development.  
Specification may change in any manner without notice.  
Preliminary  
specification  
Qualification  
This data sheet contains preliminary data, and supplementary data will be published at a later date.  
Philips Semiconductors reserves the right to make chages at any time without notice in order to  
improve design and supply the best possible product.  
Product  
specification  
Production  
This data sheet contains final specifications. Philips Semiconductors reserves the right to make  
changes at any time without notice in order to improve design and supply the best possible product.  
[1] Please consult the most recently issued datasheet before initiating or completing a design.  
Definitions  
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or  
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended  
periods may affect device reliability.  
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips  
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or  
modification.  
Disclaimers  
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications  
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.  
RighttomakechangesPhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard  
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless  
otherwise specified.  
Philips Semiconductors  
811 East Arques Avenue  
P.O. Box 3409  
Copyright Philips Electronics North America Corporation 1998  
All rights reserved. Printed in U.S.A.  
Sunnyvale, California 94088–3409  
Telephone 800-234-7381  
Date of release: 05-98  
Document order number:  
9397 750 03916  
Philips  
Semiconductors  
 

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